DMT10H015LCG-7 Datasheet
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1871pF @ 50V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 155°C (TJ) Mounting Type Surface Mount Supplier Device Package V-DFN3333-8 Package / Case 8-VDFN Exposed Pad |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1871pF @ 50V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 155°C (TJ) Mounting Type Surface Mount Supplier Device Package V-DFN3333-8 Package / Case 8-VDFN Exposed Pad |
