DMT10H010LPS-13 Datasheet
DMT10H010LPS-13 Datasheet
Total Pages: 8
Size: 459.5 KB
Diodes Incorporated
Website: https://www.diodes.com/
This datasheet covers 1 part numbers:
DMT10H010LPS-13
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 98A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.5mOhm @ 13A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 50V FET Feature - Power Dissipation (Max) 1.2W (Ta), 139W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI5060-8 Package / Case 8-PowerTDFN |
