DMN61D9UW-13 Datasheet
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28.5pF @ 30V FET Feature - Power Dissipation (Max) 320mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323 Package / Case SC-70, SOT-323 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28.5pF @ 30V FET Feature - Power Dissipation (Max) 320mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-323 Package / Case SC-70, SOT-323 |