DMN61D8LQ-7 Datasheet
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 3V, 5V Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V FET Feature - Power Dissipation (Max) 390mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 470mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 3V, 5V Rds On (Max) @ Id, Vgs 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 12.9pF @ 12V FET Feature - Power Dissipation (Max) 390mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
