Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN2019UTS-13 Datasheet

DMN2019UTS-13 Datasheet
Total Pages: 6
Size: 223.65 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DMN2019UTS-13
DMN2019UTS-13 Datasheet Page 1
DMN2019UTS-13 Datasheet Page 2
DMN2019UTS-13 Datasheet Page 3
DMN2019UTS-13 Datasheet Page 4
DMN2019UTS-13 Datasheet Page 5
DMN2019UTS-13 Datasheet Page 6
DMN2019UTS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.4A

Rds On (Max) @ Id, Vgs

18.5mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

143pF @ 10V

Power - Max

780mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP