DMN2011UTS-13 Datasheet
DMN2011UTS-13 Datasheet
Total Pages: 7
Size: 434.28 KB
Diodes Incorporated
Website: https://www.diodes.com/
This datasheet covers 1 part numbers:
DMN2011UTS-13
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 11mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2248pF @ 10V FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width) |
