DMN2005LP4K-7 Datasheet
DMN2005LP4K-7 Datasheet
Total Pages: 7
Size: 436.66 KB
Diodes Incorporated
Website: https://www.diodes.com/
This datasheet covers 1 part numbers:
DMN2005LP4K-7
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 900mV @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 41pF @ 3V FET Feature - Power Dissipation (Max) 400mW (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X2-DFN1006-3 Package / Case 3-XFDFN |