DMN1019USN-13 Datasheet
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 2.5V Rds On (Max) @ Id, Vgs 10mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50.6nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2426pF @ 10V FET Feature - Power Dissipation (Max) 680mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-59 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 2.5V Rds On (Max) @ Id, Vgs 10mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50.6nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2426pF @ 10V FET Feature - Power Dissipation (Max) 680mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-59 Package / Case TO-236-3, SC-59, SOT-23-3 |
