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DMG9N65CTI Datasheet

DMG9N65CTI Datasheet
Total Pages: 5
Size: 432.72 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DMG9N65CTI
DMG9N65CTI Datasheet Page 1
DMG9N65CTI Datasheet Page 2
DMG9N65CTI Datasheet Page 3
DMG9N65CTI Datasheet Page 4
DMG9N65CTI Datasheet Page 5
DMG9N65CTI

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3Ohm @ 4.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2310pF @ 25V

FET Feature

-

Power Dissipation (Max)

13W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220AB

Package / Case

TO-220-3 Full Pack, Isolated Tab