DMG4N60SCT Datasheet
DMG4N60SCT Datasheet
Total Pages: 6
Size: 201.7 KB
Diodes Incorporated
Website: https://www.diodes.com/
This datasheet covers 1 part numbers:
DMG4N60SCT
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 532pF @ 25V FET Feature - Power Dissipation (Max) 113W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
