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DGD2101S8-13 Datasheet

DGD2101S8-13 Datasheet
Total Pages: 11
Size: 1,357.6 KB
Diodes Incorporated
This datasheet covers 1 part numbers: DGD2101S8-13
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DGD2101S8-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Driven Configuration

Half-Bridge

Channel Type

Independent

Number of Drivers

2

Gate Type

IGBT, N-Channel MOSFET

Voltage - Supply

10V ~ 20V

Logic Voltage - VIL, VIH

0.8V, 2.5V

Current - Peak Output (Source, Sink)

290mA, 600mA

Input Type

Non-Inverting

High Side Voltage - Max (Bootstrap)

600V

Rise / Fall Time (Typ)

70ns, 35ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO