DF11MR12W1M1B11BOMA1 Datasheet
DF11MR12W1M1B11BOMA1 Datasheet
Total Pages: 10
Size: 580.74 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
DF11MR12W1M1B11BOMA1
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Manufacturer Infineon Technologies Series CoolSiC™+ FET Type 2 N-Channel (Dual) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 50A Rds On (Max) @ Id, Vgs 23mOhm @ 50A, 15V Vgs(th) (Max) @ Id 5.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs 125nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 800V Power - Max 20mW Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
