DD242S10KKHPSA1 Datasheet
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Manufacturer Infineon Technologies Series * Diode Configuration - Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) (per Diode) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Operating Temperature - Junction - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Infineon Technologies Series - Diode Configuration 1 Pair Series Connection Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) (per Diode) 261A Voltage - Forward (Vf) (Max) @ If 1.55V @ 800A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200mA @ 1000V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
Manufacturer Infineon Technologies Series * Diode Configuration - Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) (per Diode) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Operating Temperature - Junction - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 261A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200mA @ 1000V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case Module Supplier Device Package BG-PB50ND-1 Operating Temperature - Junction -40°C ~ 135°C |
