D650N08TXPSA1 Datasheet
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 650A Voltage - Forward (Vf) (Max) @ If 950mV @ 450A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 20mA @ 800V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AA, A-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 650A Voltage - Forward (Vf) (Max) @ If 950mV @ 450A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 20mA @ 400V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AA, A-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 650A Voltage - Forward (Vf) (Max) @ If 950mV @ 450A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 20mA @ 600V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AA, A-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 650A Voltage - Forward (Vf) (Max) @ If 950mV @ 450A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 20mA @ 200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AA, A-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
