D1050N16TXPSA1 Datasheet
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) 1050A Voltage - Forward (Vf) (Max) @ If 1V @ 1000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 60mA @ 1600V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AB, B-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1400V Current - Average Rectified (Io) 1050A Voltage - Forward (Vf) (Max) @ If 1V @ 1000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 60mA @ 1400V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AB, B-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 1050A Voltage - Forward (Vf) (Max) @ If 1V @ 1000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 60mA @ 1200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AB, B-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1800V Current - Average Rectified (Io) 1050A Voltage - Forward (Vf) (Max) @ If 1V @ 1000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 60mA @ 1800V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AB, B-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
