CY7C1355C-133BGXC Datasheet
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Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 6.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 119-BGA Supplier Device Package 119-PBGA (14x22) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 6.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 119-BGA Supplier Device Package 119-PBGA (14x22) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 6.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 119-BGA Supplier Device Package 119-PBGA (14x22) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 100MHz Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 119-BGA Supplier Device Package 119-PBGA (14x22) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 100MHz Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 119-BGA Supplier Device Package 119-PBGA (14x22) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 6.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 6.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 100MHz Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 100MHz Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 100MHz Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (256K x 36) Memory Interface Parallel Clock Frequency 100MHz Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
