CTLDM8120-M621H TR Datasheet
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Manufacturer Central Semiconductor Corp Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 950mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 150mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.56nC @ 4.5V Vgs (Max) 8V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 16V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TLM621H Package / Case 6-XFDFN Exposed Pad |
Manufacturer Central Semiconductor Corp Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 950mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 150mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.56nC @ 4.5V Vgs (Max) 8V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 16V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TLM621H Package / Case 6-XFDFN Exposed Pad |
