CTLDM7003-M621 TR Datasheet
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Manufacturer Central Semiconductor Corp Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.764nC @ 4.5V Vgs (Max) 12V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TLM621 Package / Case 6-PowerVFDFN |
Manufacturer Central Semiconductor Corp Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 5V Rds On (Max) @ Id, Vgs 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.764nC @ 4.5V Vgs (Max) 12V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TLM621 Package / Case 6-PowerVFDFN |
