CLS03 Datasheet
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.58V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 60V Capacitance @ Vr, F 345pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
