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CLS02(TE16R Datasheet

CLS02(TE16R Datasheet
Total Pages: 5
Size: 194.06 KB
Toshiba Semiconductor and Storage
CLS02(TE16R Datasheet Page 1
CLS02(TE16R Datasheet Page 2
CLS02(TE16R Datasheet Page 3
CLS02(TE16R Datasheet Page 4
CLS02(TE16R Datasheet Page 5
CLS02(TE16R,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.55V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 40V

Capacitance @ Vr, F

420pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS02(TE16L,SQC,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.55V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 40V

Capacitance @ Vr, F

420pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS02(TE16L,HIT,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.55V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 40V

Capacitance @ Vr, F

420pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS02(T6L,CLAR,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.55V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 40V

Capacitance @ Vr, F

420pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C

CLS02(T6L,CANO-O,Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

0.55V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 40V

Capacitance @ Vr, F

420pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

L-FLAT™

Supplier Device Package

L-FLAT™ (4x5.5)

Operating Temperature - Junction

-40°C ~ 125°C