CLS02(TE16R Datasheet
![CLS02(TE16R Datasheet Page 1](http://pneda.ltd/static/datasheets/images/33/cls02-te16r-q-0001.webp)
![CLS02(TE16R Datasheet Page 2](http://pneda.ltd/static/datasheets/images/33/cls02-te16r-q-0002.webp)
![CLS02(TE16R Datasheet Page 3](http://pneda.ltd/static/datasheets/images/33/cls02-te16r-q-0003.webp)
![CLS02(TE16R Datasheet Page 4](http://pneda.ltd/static/datasheets/images/33/cls02-te16r-q-0004.webp)
![CLS02(TE16R Datasheet Page 5](http://pneda.ltd/static/datasheets/images/33/cls02-te16r-q-0005.webp)
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |