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CBS10F40 Datasheet

CBS10F40 Datasheet
Total Pages: 5
Size: 842.43 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: CBS10F40,L3F
CBS10F40 Datasheet Page 1
CBS10F40 Datasheet Page 2
CBS10F40 Datasheet Page 3
CBS10F40 Datasheet Page 4
CBS10F40 Datasheet Page 5
CBS10F40,L3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

700mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

20µA @ 40V

Capacitance @ Vr, F

74pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

SOD-882

Supplier Device Package

CST2B

Operating Temperature - Junction

150°C (Max)