BUK9907-55ATE Datasheet
BUK9907-55ATE Datasheet
Total Pages: 16
Size: 367.64 KB
NXP
This datasheet covers 1 part numbers:
BUK9907-55ATE,127
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 108nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 5836pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 272W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-5 Package / Case TO-220-5 |
