BUK652R7-30C Datasheet
BUK652R7-30C Datasheet
Total Pages: 16
Size: 369.05 KB
NXP
This datasheet covers 1 part numbers:
BUK652R7-30C,127
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 6960pF @ 25V FET Feature - Power Dissipation (Max) 204W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
