BUK652R6-40C Datasheet
BUK652R6-40C Datasheet
Total Pages: 15
Size: 468.18 KB
NXP
This datasheet covers 1 part numbers:
BUK652R6-40C,127
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 199nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 11334pF @ 25V FET Feature - Power Dissipation (Max) 263W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
