BTS282Z E3230 Datasheet
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Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 49V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 300W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO220-7-230 Package / Case TO-220-7 |
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 49V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 300W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO220-7-3 Package / Case TO-220-7 |
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 49V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 300W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO220-7-180 Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
