BTS244Z E3062A Datasheet
|
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 170W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO220-5-62 Package / Case TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 170W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO220-5-43 Package / Case TO-220-5 |
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 170W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-5-3 Package / Case TO-220-5 Formed Leads |
