BSS816NW L6327 Datasheet
BSS816NW L6327 Datasheet
Total Pages: 9
Size: 450.64 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
BSS816NW L6327
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 2.5V Vgs(th) (Max) @ Id 750mV @ 3.7µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 2.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT323-3 Package / Case SC-70, SOT-323 |
