BSO215C Datasheet
BSO215C Datasheet
Total Pages: 13
Size: 153.57 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
BSO215C
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Manufacturer Infineon Technologies Series SIPMOS® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.7A Rds On (Max) @ Id, Vgs 100mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 246pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
