Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSO203PNTMA1 Datasheet

BSO203PNTMA1 Datasheet
Total Pages: 8
Size: 82.89 KB
Infineon Technologies
This datasheet covers 1 part numbers: BSO203PNTMA1
BSO203PNTMA1 Datasheet Page 1
BSO203PNTMA1 Datasheet Page 2
BSO203PNTMA1 Datasheet Page 3
BSO203PNTMA1 Datasheet Page 4
BSO203PNTMA1 Datasheet Page 5
BSO203PNTMA1 Datasheet Page 6
BSO203PNTMA1 Datasheet Page 7
BSO203PNTMA1 Datasheet Page 8
BSO203PNTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8.2A

Rds On (Max) @ Id, Vgs

21mOhm @ 8.2A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

48.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

2242pF @ 15V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

P-DSO-8