BSM300D12P2E001 Datasheet
BSM300D12P2E001 Datasheet
Total Pages: 10
Size: 1,679.47 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
BSM300D12P2E001
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Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 300A (Tc) Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 4V @ 68mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 35000pF @ 10V Power - Max 1875W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
