BSH205 Datasheet
|
Manufacturer NXP USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 400mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id 680mV @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 9.6V FET Feature - Power Dissipation (Max) 417mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB (SOT23) Package / Case TO-236-3, SC-59, SOT-23-3 |
