BSH202 Datasheet
BSH202 Datasheet
Total Pages: 8
Size: 225.11 KB
Nexperia
This datasheet covers 1 part numbers:
BSH202,215
|
Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 520mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 900mOhm @ 280mA, 10V Vgs(th) (Max) @ Id 1.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 80pF @ 24V FET Feature - Power Dissipation (Max) 417mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
