BSH114 Datasheet
BSH114 Datasheet
Total Pages: 14
Size: 383.97 KB
Nexperia
This datasheet covers 1 part numbers:
BSH114,215
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 138pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta), 830mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
