BSC027N10NS5ATMA1 Datasheet
BSC027N10NS5ATMA1 Datasheet
Total Pages: 11
Size: 831.21 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
BSC027N10NS5ATMA1
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.8V @ 146µA Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8200pF @ 50V FET Feature - Power Dissipation (Max) 3W (Ta), 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSON-8-3 Package / Case 8-PowerTDFN |
