BSB012NE2LX Datasheet
BSB012NE2LX Datasheet
Total Pages: 13
Size: 1,445.56 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
BSB012NE2LX
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 37A (Ta), 170A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 12V FET Feature - Power Dissipation (Max) 2.8W (Ta), 57W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MG-WDSON-2, CanPAK M™ Package / Case 3-WDSON |
