BFU730LXZ Datasheet
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 3V Frequency - Transition 53GHz Noise Figure (dB Typ @ f) 0.75dB @ 6GHz Gain 15.8dB Power - Max 160mW DC Current Gain (hFE) (Min) @ Ic, Vce 205 @ 2mA, 3V Current - Collector (Ic) (Max) 30mA Operating Temperature - Mounting Type Surface Mount Package / Case 3-XFDFN Supplier Device Package 3-DFN1006 (1.0x0.6) |
