BFL4001-1EX Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.7Ohm @ 3.25A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 30V FET Feature - Power Dissipation (Max) 2W (Ta), 37W (Tc) Operating Temperature 150°C (TA) Mounting Type Through Hole Supplier Device Package TO-220-3 Fullpack/TO-220F-3SG Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.7Ohm @ 3.25A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 30V FET Feature - Power Dissipation (Max) 2W (Ta), 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Fullpack/TO-220F-3SG Package / Case TO-220-3 Full Pack |
