BFG425W Datasheet
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 4.5V Frequency - Transition 25GHz Noise Figure (dB Typ @ f) 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Gain 20dB Power - Max 135mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA, 2V Current - Collector (Ic) (Max) 30mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package CMPAK-4 |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 4.5V Frequency - Transition 25GHz Noise Figure (dB Typ @ f) 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Gain 20dB Power - Max 135mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA, 2V Current - Collector (Ic) (Max) 30mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package CMPAK-4 |
