BFG410W Datasheet
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 4.5V Frequency - Transition 22GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz Gain 21dB Power - Max 54mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 2V Current - Collector (Ic) (Max) 12mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package CMPAK-4 |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 4.5V Frequency - Transition 22GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz Gain 21dB Power - Max 54mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 2V Current - Collector (Ic) (Max) 12mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package CMPAK-4 |
