BFG35 Datasheet
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 18V Frequency - Transition 4GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 1W DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 100mA, 10V Current - Collector (Ic) (Max) 150mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package SOT-223 |
