BFG10/X Datasheet
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 8V Frequency - Transition 1.9GHz Noise Figure (dB Typ @ f) - Gain 7dB Power - Max 400mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA, 5V Current - Collector (Ic) (Max) 250mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-253-4, TO-253AA Supplier Device Package SOT-143B |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 8V Frequency - Transition 1.9GHz Noise Figure (dB Typ @ f) - Gain 7dB Power - Max 400mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA, 5V Current - Collector (Ic) (Max) 250mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-253-4, TO-253AA Supplier Device Package SOT-143B |
