BF959ZL1G Datasheet




Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 625mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 100mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |