BF799WH6327XTSA1 Datasheet
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 800MHz Noise Figure (dB Typ @ f) 3dB @ 100MHz Gain - Power - Max 280mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 800MHz Noise Figure (dB Typ @ f) 3dB @ 100MHz Gain - Power - Max 280mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
