BF199_J35Z Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 1.1GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 38 @ 7mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 1.1GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 38 @ 7mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 1.1GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 38 @ 7mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
