Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BD537KTU Datasheet

BD537KTU Datasheet
Total Pages: 2
Size: 91.3 KB
ON Semiconductor
This datasheet covers 5 part numbers: BD537KTU, BD537K, BD537J, BD533J, BD535J
BD537KTU Datasheet Page 1
BD537KTU Datasheet Page 2
BD537KTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

8A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

800mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 2A, 2V

Power - Max

50W

Frequency - Transition

12MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

BD537K

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

8A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

800mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 2A, 2V

Power - Max

50W

Frequency - Transition

12MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

BD537J

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

8A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

800mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 2A, 2V

Power - Max

50W

Frequency - Transition

12MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

BD533J

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

8A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

800mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 2A, 2V

Power - Max

50W

Frequency - Transition

12MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

BD535J

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

8A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

800mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 2A, 2V

Power - Max

50W

Frequency - Transition

12MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3