BCR 101T E6327 Datasheet
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Manufacturer Infineon Technologies Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 100 kOhms Resistor - Emitter Base (R2) 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 100MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package PG-SC-75 |
Manufacturer Infineon Technologies Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 100 kOhms Resistor - Emitter Base (R2) 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 100MHz Power - Max 250mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package PG-TSLP-3-4 |
