AUIRF1018E Datasheet
AUIRF1018E Datasheet
Total Pages: 2
Size: 156.71 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
AUIRF1018E
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 79A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 8.4mOhm @ 47A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
