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ATP602-TL-H Datasheet

ATP602-TL-H Datasheet
Total Pages: 7
Size: 349.26 KB
ON Semiconductor
This datasheet covers 1 part numbers: ATP602-TL-H
ATP602-TL-H Datasheet Page 1
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ATP602-TL-H Datasheet Page 7
ATP602-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

13.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 30V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ATPAK

Package / Case

ATPAK (2 leads+tab)