ATP112-TL-H Datasheet
ATP112-TL-H Datasheet
Total Pages: 7
Size: 369.53 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
ATP112-TL-H
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 43mOhm @ 13A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 33.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 20V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ATPAK Package / Case ATPAK (2 leads+tab) |
