ATP104-TL-HX Datasheet
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.4mOhm @ 38A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 10V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ATPAK Package / Case ATPAK (2 leads+tab) |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.4mOhm @ 38A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 10V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ATPAK Package / Case ATPAK (2 leads+tab) |
